17. Influence of adsorbates on UV-pulsed laser melting of Si in ultra-high vacuum, Dragnea, B.; Boulmer, J.; Debarre, D.; Bourguignon, B. Applied Physics A: Materials Science & Processing, 73(5), 609-613 (2001).

16. Growth of a SiC layer on Si(100) from adsorbed propene by laser melting, Dragnea, Bogdan; Boulmer, Jacques; Debarre, Dominique; Bourguignon, Bernard. Applied Physics A: Materials Science & Processing, 73(5), 609-613 (2001).

8. Laser induced structural or compositional modifications of Si or IV-IV surface: planarization, pulsed laser induced epitaxy, carbon incorporation, chemical etching, Boulmer, J.; Dragnea, B.; Guedj, C.; Debarre, D.; Bosseboeuf, A.; Finkman, E.; Bourguignon, B. Proceedings of SPIE-The International Society for Optical Engineering, 3404(Laser Surface Processing), 149-158 (1998), DOI: 10.1117/12.308609.

7. Laser-induced annealing and etching of silicon: experiments and mathematical simulations, Bourguignon, B.; Dragnea, B.; Boulmer, J.; Budin, J. -P.; Debarre, D; Annales de Physique (Paris), 22(Colloq. 1), C1/229-C1/236 (1997).

6. Desorption and diffusion at pulsed-laser-melted surfaces: The case of chlorine on silicon, Dragnea, Bogdan; Boulmer, Jacques; Budin, Jean-Pierre; Debarre, Dominique; Bourguignon, Bernard. Physical Review B: Condensed Matter, 55(20), 13904-13915 (1997).

5. Laser modifications of Si(100):Cl surfaces induced by surface melting: etching and cleaning, Bourguignon, B.; Stoica, M.; Dragnea, B.; Carrez, S.; Boulmer, J.; Budin, J.-P.; Debarre, D.; Aliouchouche, A. Surface Science, 338(1-3), 94-110 (1995).